Fluoride passivation of ZnO electron transport layers for efcient PbSe colloidal quantum dot photovoltaics

作     者：Jungang He You Ge Ya Wang Mohan Yuan Hang Xia Xingchen Zhang Xiao Chen Xia Wang Xianchang Zhou Kanghua Li Chao Chen Jiang Tang Jungang He;You Ge;Ya Wang;Mohan Yuan;Hang Xia;Xingchen Zhang;Xiao Chen;Xia Wang;Xianchang Zhou;Kanghua Li;Chao Chen;Jiang Tang

作者机构：Hubei Key Laboratory of Plasma Chemistry and Advanced MaterialsHubei Engineering Technology Research Center of Optoelectronic and New Energy MaterialsSchool of Materials Science and EngineeringWuhan Institute of TechnologyWuhan 430205China Wuhan National Laboratory for Optoelectronics(WNLO)School of Optical and Electronic InformationSchool of Integrated CircuitsHuazhong University of Science and TechnologyWuhan 430074China 

出 版 物：《Frontiers of Optoelectronics》 (光电子前沿（英文版）)

年 卷 期：2023年第16卷第3期

页      面：141-151页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the National Natural Science Foundation of China(Grant No.62105110) the Wuhan Institute of Technology(No.19QD09) the Analytical and Testing Center of HUST and the facility support of the Center for Nanoscale Characterization and Devices(CNCD),WNLO-HUST 

主　　题：Zinc oxide Surface passivation Band alignment Quantum-dot solar cells 

摘      要：Lead selenide(PbSe)colloidal quantum dots(CQDs)are suitable for the development of the next-generation of photovoltaics(PVs)because of efcient multiple-exciton generation and strong charge coupling *** date,the reported high-efcient PbSe CQD PVs use spin-coated zinc oxide(ZnO)as the electron transport layer(ETL).However,it is found that the surface defects of ZnO present a difculty in completion of passivation,and this impedes the continuous progress of *** address this disadvantage,fuoride(F)anions are employed for the surface passivation of ZnO through a chemical bath deposition method(CBD).The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band *** from these improvements,PbSe CQD PVs report an efciency of 10.04%,comparatively 9.4%higher than that of devices using sol-gel(SG)ZnO as *** are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.