GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications

作     者：Swagata Samanta Swagata Samanta

作者机构：Department of Electronics and Communication EngineeringSRM University-APAndhra PradeshIndia 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第10期

页      面：26-35页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：gallium arsenide microfabrication resonant tunneling devices 

摘      要：This review article discusses the development of gallium arsenide(GaAs)-based resonant tunneling diodes(RTD)since the *** the best of my knowledge,this article is the first review of GaAs RTD technology which covers different epitaxialstructure design,fabrication techniques,and characterizations for various application *** is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments,as well as have an outlook on the current trends and future developments in GaAs RTD research.