Fin field-effect transistors based on 2D Bi_(2)O_(2)Se——a huge innovation of 2D transistors device structure

作     者：Qundong Fu Beng Kang Tay Zheng Liu 

作者机构：School of Materials Science and EngineeringNanyang Technological UniversitySingapore 639798Singapore CINTRA CNRS/NTU/THALESUMI 3288Research Techno PlazaSingapore 637553Singapore 

出 版 物：《中国科学:化学英文版》 (SCIENCE CHINA Chemistry)

年 卷 期：2023年第66卷第9期

页      面：2439-2440页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 

主　　题：transistors transistor overcome 

摘      要：The continuous downscaling(sub 5-nm nodes) of the processing technology is severely hampered by the shortchannel effects of the silicon(Si) material, which degrade the transistor s performance and raise the demand in the development of new device structures and materials to overcome them. Two-dimensional(2D) semiconductors are promising candidates for next-generation electronic materials owing to their atomic thickness and van der Waals(vdW) surface.