Nanoforming of transferred metal contacts for enhanced twodimensional field effect transistors

作     者：Shuoheng Xu Zheng Huang Jie Guan Yaowu Hu Shuoheng Xu;Zheng Huang;Jie Guan;Yaowu Hu

作者机构：The Institute of Technological SciencesWuhan UniversityWuhan 430072China School of Power and Mechanical EngineeringWuhan UniversityWuhan 430072China School of PhysicsSoutheast UniversityNanjing 211189China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2024年第17卷第4期

页      面：3210-3216页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(No.51901162) 

主　　题：laser shock nanoforming metal-semiconductor contact electronics two-dimensional transistors 

摘      要：Two-dimensional transition metal chalcogenides(2D-TMDs)have attracted much attention because of their unique layered structure and physical properties for transistor *** transferred metal contacts on these low-dimensional materials or their homogeneous and heterogeneous multilayers have generated huge interest to avoid deposition *** this paper,we show that there are large physical gaps at both the edge contact and surface contact between the transferred electrodes and the 2D materials.A method called laser shock induced superplastic deformation(LSISD)is proposed to tackle this issue and enhance the performance of the *** enhancement mechanism was investigated by molecular dynamics(MD)simulations of the nanoforming process,atomic force microscopy(AFM),scanning electron microscopy(SEM),transmission electron microscopy(TEM)characterizations of the interfaces,and density functional theory(DFT)*** force effect of laser shock can reduce the contact gap between metals and *** electrical performances of the transistors before and after LSISD,along with MD simulations,are used to find the optimal process *** addition,this paper applies the LSISD method to the short-channel MoS_(2)/graphene vertical transistors to show potential improvement in interface contact and electrical *** paper demonstrates the first report on using mechanical force induced by laser shock to enhance metal–semiconductor interfaces and transistor performances.