Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications

作     者：Shengzhe YAN Zhaori CONG Nianduan LU Jinshan YUE Qing LUO 

作者机构：Institute of Microelectronics of the Chinese Academy of Sciences University of Chinese Academy of Sciences 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第10期

页      面：61-83页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported in part by National Key R&D Program (Grant No. 2018YFA0208503) National Natural Science Foundation of China (Grant Nos. 92264204, 61890944) China Postdoctoral Science Foundation (Grant No. 2021M703444) 

主　　题：IGZO FET 2T0C DRAM high density compact modeling computing-in-memory monolithic 3D integration 

摘      要：In the past several decades, the density and performance of transistors in a single chip have been increasing based on Moore’s Law. However, the slowdown of feature size reduction and memory wall in the von Neumann architecture restrict the improvement of system performance and energy efficiency. Thus the requirements of the emerging big data and artificial intelligence applications cannot be met. To address this issue, novel devices and architectures are being explored. Among them, the InGaZnO(IGZO) fieldeffect transistor(FET) device and the computing-in-memory(CIM) architecture can be possible solutions for high-density, high-performance, and high-efficiency applications. Herein, we review the recent progress in IGZO-based FETs for dynamic random access memory(DRAM) applications. The mechanism of IGZO FETs, compact modeling of IGZO transistors, progress of IGZO manufacturing process, IGZO circuit design,and IGZO-based CIM and 3D integration architectures are presented. Furthermore, the challenges and future trends of IGZO research are discussed.