Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg_(3)Sb_(1.5)Bi_(0.5)
作者机构：School of Materials Science and EngineeringShanghai University99 Shangda RoadShanghai200444China Materials Genome InstituteShanghai University99 Shangda RoadShanghai200444China State Key Laboratory of Particle Detection and ElectronicsUniversity of Science and Technology of ChinaHefeiAnhui230026China School of Physics and Materials ScienceGuangzhou UniversityGuangzhou510006China Research Center for Advanced Information Materials(CAIM)Huangpu Research&Graduate School of Guangzhou UniversitySino-Singapore Guangzhou Knowledge CityHuangpu DistrictGuangzhou510555China Key Lab of Si-based Information Materials&Devices and Integrated Circuits DesignDepartment of Education of Guangdong ProvinceChina School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin541004China Guangxi Key Laboratory of Information MaterialsGuilin University of Electronic TechnologyGuilin541004China
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2024年第10卷第1期
页 面：154-162页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：supported by the National Key Research and Development Program of China(Nos.2018YFA0702100 and 2019YFA0210001) National Natural Science Foundation of China(No.U21A2054 and 52072234) K.Guo acknowledges the support from Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou(No.202255464)
主 题：Mg_(3)Sb_(2) Cu doping Concentration-dependent occupation Thermoelectric properties Average zT
摘 要：Large Seebeck coefficients induced by high degeneracy of conduction band minimum,and low intrinsic lattice thermal conductivity originated from large lattice vibrational anharmonicity render Mg_(3)Sb_(2)as a promising n-type thermoelectric ***,we demonstrated unique concentration-dependent occupation behaviors of Cu in Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)matrix,evidenced by structural characterization and transport property *** is found that Cu atoms prefer to enter the interstitial lattice sites in Mg_(3)Sb_(2)host with low doping level(Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+x%Cu,x0.3%),acting as donors for providing additional electrons without deteriorating the carrier *** x is larger than 0.3%,the excessive Cu atoms are inclined to substitute Mg atoms,yielding acceptors to decrease the electron *** a result,the electrical conductivity of the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+0.3%Cu sample reaches 2.3×10^(4)S/m at 300 K,increasing by 300%compared with that of the pristine *** figure of merit zT values in the whole measured temperature range are significantly improved by the synergetic improvement of power factor and reduction of thermal *** average zT∼1.07 from 323 K to 773 K has been achieved for the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+0.3%Cu sample,which is about 30%higher than that of the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01) sample.
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