Etching characteristics and surface modification of InGaSnO thin films under Cl_(2)/Ar plasma

作     者：Young-Hee JOO Jae-Won CHOI Bo HOU Hyuck-In KWON Doo-Seung UM Chang-Il KIM Young-Hee JOO;Jae-Won CHOI;Bo HOU;Hyuck-In KWON;Doo-Seung UM;Chang-Ⅱ KIM

作者机构：Department of Electronic and Electrical EngineeringChung-Ang UniversitySeoul 06974Republic of Korea Department of Firearms and OpticsDaeduk UniversityDaejeon 34111Republic of Korea School of Physics and AstronomyCardiff UniversityCardiff CF243AAUnited Kingdom Department of Electrical EngineeringSejong UniversitySeoul 05006Republic of Korea 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2023年第25卷第10期

页      面：91-96页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the Chung-Ang University Research Grants in 2021 the National Research Foundation(NRF)of Korea(No.2020R1G1A1102692) 

主　　题：InGaSnO Cl2-based plasma etching mechanism surface modification plasma etching 

摘      要：Indium gallium tin oxide(IGTO)thin films have the potential for high mobility and lowtemperature processing,which makes them suitable for applications such as display backplanes and high-voltage switching ***,very few studies have investigated the plasmaetching characteristics of IGTO and changes in its properties after *** this study,the etching characteristics of IGTO were investigated using Cl_(2)/Ar plasma,and changes in surface properties were *** showed that the etch rate increased with an increase in the proportion of Cl_(2),with the highest etch rate observed at 69 nm min^(-1)in pure Cl_(2)plasma with a gas flow rate of 100 ***,increased radio-frequency power caused a rise in the etch rate,while a process pressure of 15 m Torr was *** primary etching mechanism for IGTO thin films under Cl_(2)plasma was a chemical reaction,and an increased work function indicated the occurrence of defects on the *** addition,the etching process reduced the surface roughness of Cl_(2)-containing plasma,whereas the etching process in pure Ar plasma increased surface *** study contributes to a better understanding of the plasmaetching characteristics of IGTO and changes in its properties after etching,providing valuable insights for IGTO-based applications.