Microwave characterization of two Ba_(0.6)Sr_(0.4)TiO_(3) dielectric thin films with out-of-plane and in-plane electrode structures
作者机构:School of Electronic Engineering and Computer ScienceQueen Mary University of LondonLondon E14NSUK School of Engineering and Materials ScienceQueen Mary University of LondonLondon E14NSUK Department of ChemistryUniversity College LondonLondon WC1H 0AJUK Advanced Services and ProductsQinetiQFarnborough GU140LXUK
出 版 物:《Journal of Advanced Ceramics》 (先进陶瓷(英文))
年 卷 期:2023年第12卷第8期
页 面:1521-1532页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:This work was supported by the“Software Defined Materials for Dynamic Control of Electromagnetic Waves”(ANIMATE)Project(QinetiQ IRAD Grant No.41025673 and EPSRC Grant No.EP/R035393/1) and the authors acknowledge QinetiQ and Engineering and Physical Sciences Research Council(EPSRC).Hanchi Ruan acknowledges EPSRC for funding the Ph.D.studentship
主 题:ferroelectric(FE) microwave tunability polarization thin film
摘 要:Ferroelectric(FE)thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces(LISs).However,the mechanism of how a polar structure in the FE thin films contributes to desired tunable performance,especially within the microwave frequency range,which is the most widely used frequency range of electromagnetics,has not been illustrated *** this paper,we described several straightforward and cost-effective methods to fabricate and characterize Ba_(0.6)Sr_(0.4)TiO_(3)(BST)thin films at microwave *** prepared BST thin films here exhibit homogenous structures and great tunability(h)in a wide frequency and temperature range when the applied field is in the out-of-plane *** high tunability can be attributed to high concentration of polar *** response to the applied direct current(DC)field was directly visualized using a novel non-destructive near-field scanning microwave microscopy(NSMM)*** results have provided some intriguing insights into the application of the FE thin films for future programmable high-frequency devices and systems.