Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga_(2)O_(3) films for solar-blind imaging

作     者：ZHENG QiQi CHEN LingRui LI XuDong DING Ke PANG Di LI HongLin XIONG YuanQiang RUAN HaiBo FANG Liang LI WanJun YE LiJuan ZHANG Hong KONG ChunYang 

作者机构：Chongqing Key Laboratory of Photo-Electric Functional MaterialsCollege of Physics and Electronic EngineeringChongqing Normal UniversityChongqing 401331China Research Center for Materials Interdisciplinary SciencesChongqing University of Arts and SciencesChongqing 402160China College of PhysicsChongqing UniversityChongqing 401331China 

出 版 物：《中国科学:技术科学英文版》 (Science China: Technological Sciences)

年 卷 期：2023年第66卷第9期

页      面：2707-2715页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 1101[军事学-军事思想及军事历史] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11904041 and 12104077) the Natural Science Foundation of Chongqing(Grant Nos.cstc2020jcyj-msxmX0557,cstc2019jcyj-msxmX0237,cstc2020jcyj-msxmX0533,and CSTB2022BSXM-JCX0090) the Science and Technology Research Project of Chongqing Education Committee(Grant Nos.KJQN202100540,KJQN202000511,and KJQN202100501) the College Students Innovation and Entrepreneurship Training Program of Chongqing City(Grant No.S202210637052) 

主　　题：Ga_(2)O_(3) phase transition photodetector arrays high-performance solar-blind imaging 

摘      要：Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor ***,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid ***-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable ***,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based *** assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind *** study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.