Improving performance of Cs_(2)AgBiBr_(6)solar cell through constructing gradient energy level with deep-level hole transport material

作     者：Zi-Yang Xia Wei Zhang Cheng Chen Hao-Xin Wang Lin-Qin Wang Ya-Wei Miao Xing-Dong Ding Li-Cheng Sun Ming Cheng Zi-Yang Xia;Wei Zhang;Cheng Chen;Hao-Xin Wang;Lin-Qin Wang;Ya-Wei Miao;Xing-Dong Ding;Li-Cheng Sun;Ming Cheng

作者机构：Institute for Energy ResearchSchool of Energy and Power EngineeringJiangsu UniversityZhenjiang212013China Center of Artificial Photosynthesis for Solar Fuels and Department of ChemistrySchool of ScienceWestlake UniversityHangzhou310024China 

出 版 物：《稀有金属:英文版》 (Rare Metals)

年 卷 期：2023年第42卷第9期

页      面：3004-3012页

核心收录：

学科分类：08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：financially supported by the National Natural Science Foundation of China(Nos.22179053,22279046 and 21905119) the Natural Science Excellent Youth Foundation of Jiangsu Provincial(No.BK20220112) the Open Competition Mechanism Project of Carbon Neutrality of Jiangsu Province(No.BE2022026) Zhejiang Province Selected Funding for Postdoctoral Research Projects(No.ZJ2021001)for financial support 

主　　题：All-inorganic Cs_(2)AgBiBr_(6)perovskite Stepped energy level structure Energy loss Moisture resistance 

摘      要：The valence band offset between Cs_(2)AgBiBr_(6)and hole transport layer(HTL)is approximately 1.00 e V,which results in high energy loss and is identified as one of the bottle necks of Cs_(2)Ag BiBr_(6)perovskite solar cell(PSC)for achieving high power conversion efficiency(PCE).To tackle this problem,we propose the optimization of the energy level alignment by designing and synthesizing novel deep-level hole transport materials(HTMs).The sole introduction of deep-level HTMs successfully reduces the valence band offset between Cs_(2)Ag Bi Br_(6)and HTL,but induces the increased valence band offset at HTL/Au interface,limiting the PCE *** further solve the problem and improve the PCE,the gradient energy level arrangement is constructed by combining the newly developed deep-level HTM 6,6’-(3-((9,9-dimethyl-9H-fluoren-3-yl)(4-methoxyphenyl)amino)thiophene-2,5-diyl)bis(N-(9,9-dimethyl-9H-fluoren-2-yl)-N,9-bis(4-methoxyphenyl)-9H-carbazol-3-amine)(TF)with 2,2’,7,7’-tetrakis(N,N’-dipmethoxyphenylamine)-9,9-spirobifluorene(Spiro-OMeTAD).Through optimization,an impressive PCE of 3.50%with remarkably high open-circuit voltage(V_(oc))and fill factor(FF)is achieved,qualifying it among the best pristine Cs_(2)AgBiBr_(6)PSCs.