Preparation of Single Crystals of Co_xZn_(1-x)S and Co_xZn_(1-x)Se—New Materials of Dilute Magnetic Semiconductors

作     者：Gu Xiamin Giriat W. Furdyna J.K.Shanhai Institute of Metallurgy,Academia Sinica 200050 China Department of Physics University of Notre Dame.Indiana 46556,U. S. A 

作者机构：Acad Sinica Shanghai Inst of Metallurgy China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：1990年第10卷第2期

页      面：139-144页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：Co x)Se New Materials of Dilute Magnetic Semiconductors Preparation of Single Crystals of Co_xZn x)S and Co_xZn 

摘      要：In this paper, we report the growth of single crystals of Co_x Zn_(1-x)S and Co_x Zn_(1-x)Se (0x0.3) by the method of chemical transport, using iodine as a transport agent. The light green color of single crystal Co_xZn_(1-x)S as well as the light brown color of Co_xZn_(1-x)Se become deep with an increase in x. The compositions of the single crystals were nearly stoichiometric. The transfer rate decreases with an increase of the x value. The growth rate was related to the temperature difference. The large temperature difference speed up the growth rate, but the size of crystal obtained was small. In general, the optimal temperature difference was 15℃. From X-ray diffraction measurements, the structures of crystals Co_xZn_(1-x)S and Co_xZn_(1-x)Se (0x0.1) were identified to be zinc blende structure similar to that of ZnS and ZnSe.