Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation

作     者：郭辉 王悦湖 张玉明 乔大勇 张义门 

作者机构：Microelectronics School Xidian University Key Lab of Wide Band-Gap Semiconductor Materials and Devices Micro and Nano Electromechanical Systems Laboratory Northwestern Polytechnical University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第10期

页      面：4470-4473页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No J54508250120) Xi’an Applied Materials Innovation Fund (Grant No XA-AM-200704) 

主　　题：SiC Ohmic contact Ge ion implantation intermediate semiconductor layer 

摘      要：By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method （TLM） test patterns is formed on N-wells created by P＋ ion implantation into Si-faced p-type 4H- SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance pc as low as 4.23×10-5Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that （〉 900℃） in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge＋ ion implantations.