Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry

作     者：包晓清 葛道晗 焦继伟 

作者机构：State Key Laboratories of Transducer Technology National Key Laboratories of Microsystem Technology Shanghai Institute of Microsystem and Information Chinese Academy of Sciences Graduate School of Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2008年第17卷第8期

页      面：3130-3137页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National High Technology Development Program of China (Grant No 2006AA04Z312) the National Basic Research of China (Grant No 2006CB300403) 

主　　题：space charge region point nuclei unpatterned specimen I - V curve 

摘      要：Via anodizing patterned and unpatterned samples with a high HF concentration （[HF]）, the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope （SEM） micrographs and current-voltage （I - V） curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism.