In-situ synchrotron high energy X-ray diffraction study on the internal strain evolution of D019-α2 phase during high-temperature compression and subsequent annealing in a TiAl alloy
作者机构：State Key Laboratory of Solidification ProcessingNorthwestern Polytechnical UniversityXi’an 710072China Innovation Center NPU ChongqingNorthwestern Polytechnical UniversityChongqing 400000China Institute of Materials PhysicsHelmholtz-Zentrum HereonMax Planck-Str.1Geesthacht 21502Germany
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2023年第163卷第32期
页 面：212-222页
核心收录：
学科分类：0806[工学-冶金工程] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）]
基 金：the National Natural Science Foundation of China(No.51971175) Natural Science Foundation of Shanghai(No.22ZR1467400) Chongqing(No.CSTB2022NSCQMSX1113) the“111”Project(No.B20028)
主 题：TiAl alloys Synchrotron radiation Intergranular strain Stress relaxation
摘 要：The residual stress in the D019-α2 phase is known to be significantly higher than that in the L10-γphase in TiAl alloys after deformation due to the poor plasticity and strong mechanical anisotropy of theα2 ***,the internal stress accumulation and relaxation in theα2 phase during high-temperature deformation and annealing are scarcely *** this study,for the first time,the internal strain evolution and load partitioning between theα2 andγphases at high temperatures are characterized by in-situ synchrotron high energy X-ray diffraction(HEXRD)*** plastic deformation is at least initiated at a stress of roughly 200 MPa in theγphase and 775 MPa in theα2 *** intergranular strains in theα2 phase are generated by the onset of dislocation glide in theγphase,and accentuated with the accumulated dislocations and the ensuing twinning *** unloading,great intergranular strains are preserved in theα2 phase constrained by the heavily plastically deformedγ*** subsequent heating from 400 to 1000℃,the internal strains in theα2 phase are almost fully relaxed by substantial dislocation annihilation and rearrangement in theγ*** annealing at 800℃,the internal strain relaxation is rapid in the initial 10 min,whereas considerably retarded *** extent of relaxation after holding at 800℃for 1 h is equivalent to that of heating in an effective temperature range of 680-880℃for 10 *** in-situ lattice strain measurements with various thermal relaxation schemes provide guidance for the stress relief annealing of TiAl components.
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