Recent advances in NiO/Ga_(2)O_(3) heterojunctions for power electronics

作     者：Xing Lu Yuxin Deng Yanli Pei Zimin Chen Gang Wang Xing Lu;Yuxin Deng;Yanli Pei;Zimin Chen;Gang Wang

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Electronics and Information TechnologySun Yat-Sen UniversityGuangzhou 510275China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第6期

页      面：24-38页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Guangdong Basic and Applied Basic Research Foundation under Grant No. 2022A1515012163 

主　　题：gallium oxide(Ga_(2)O_(3)) nickel oxide(NiO) heterojunction power devices 

摘      要：Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga s figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.