Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells

作     者：Dae-Ho Son Dong-Hwan Jeon Dae-Hwan Kim Jin-Kyu Kang Shi-Joon Sung Jaebaek Lee Taeseon Lee Enkhjargal Enkhbayar JunHo Kim Kee-Jeong Yang Dae-Ho Son;Dong-Hwan Jeon;Dae-Hwan Kim;Jin-Kyu Kang;Shi-Joon Sung;Jaebaek Lee;Taeseon Lee;Enkhjargal Enkhbayar;JunHo Kim;Kee-Jeong Yang

作者机构：Division of Energy TechnologyDGISTDaeguRepublic of Korea Research Center for Thin Film Solar CellsDGISTDaeguRepublic of Korea Department of PhysicsIncheon National UniversityIncheonRepublic of Korea 

出 版 物：《Carbon Energy》 (碳能源（英文）)

年 卷 期：2023年第5卷第8期

页      面：42-54页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.2022M3J1A1085371) the DGIST R&D programs of the Ministry of Science and ICT(23-ET-08 and 23-CoE-ET-01) the National Research Foundation of Korea(NRF),funded by the Korean Government(NRF-2021R1A2C1008598) 

主　　题：defect density defect energy level elemental variation kesterite space charge region 

摘      要：Understanding the defect characteristics that occur near the space-charge regions(SCRs)of kesterite(CZTSSe)solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low *** surfaces with different elemental compositions were formed without polishing(C00)and with polishing for 20 s(C20)and 60 s(C60).For C60,a specific region near the SCR was excessively Cu-rich and Zn-poor compared to C00 and *** charged defects formed where the elemental variation was *** the main deep acceptor defect energy level(E_(a2))near the SCR increased,the efficiency,open-circuit voltage deficit,and current density degraded,and this phenomenon was especially rapid for large E_(a2) *** the E_(a2) near the SCR became deep,the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe_(2)(CIGSe)solar *** large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier ***,the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells.