Role of grain boundary character on Bi segregation-induced embrittlement in ultrahigh-purity copper

作     者：Y.X.Hua K.X.Song H.T.Liu J.W.Wang C.M.Zhang Y.J.Zhou B.Pang J.T.Song J.L.He H.L.Zhao Y.X.Hua;K.X.Song;H.T.Liu;J.W.Wang;C.M.Zhang;Y.J.Zhou;B.Pang;J.T.Song;J.L.He;H.L.Zhao

作者机构：School of Materials Science and EngineeringHenan University of Science and TechnologyLuoyang 471023China Henan Academy of SciencesZhengzhou 450000China Henan Key Laboratory of Advanced Conductor MaterialsZhengzhou 450046China Provincial and Ministerial Co-construction of Collaborative Innovation Center of Nonferrous New Materials and Advanced Processing TechnologyLuoyang 471023China Center of Electron Microscopy and State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China College of Materials Science and EngineeringZhengzhou UniversityZhengzhou 450001China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2023年第159卷第28期

页      面：52-61页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the National Natu-ral Science Foundation of China(Nos.52071133,51904090 and 52071284) the Henan Province Science and Technology Tackling Key Problems Project(No.222102230001) the Henan Province Young Talent Lifting Engineering Project(No.2021HYTP018) the Central Plain Scholar Workstation Project(No.224400510025) the Key R&D projects of Henan Province(No.221111230600) 

主　　题：Grain boundary character Embrittlement Bi segregation Atomic configuration Ultrahigh-purity copper 

摘      要：Bismuth(Bi),as an impurity element in copper and copper-based alloys,usually has a strong tendency of grain boundary(GB)segregation,which depends on the GB ***,the influence of such a segregation on the properties of ultrahigh-purity copper has been rarely reported and the exact structural arrangements of Bi atoms at different GBs remain largely *** this study,we investigated the influ-ence of trace amounts of Bi(50-300 wt ppm)on the ductility of an ultrahigh-purity copper(99.99999%)in the range of room temperature to 900°*** tensile results show that the addition of Bi seriously damages the ductility of the ultrahigh-purity copper at temperatures of 450-900°C,which is due to the GB segregation of *** this basis,such a segregation behavior at different types of GBs,including high and low angle GBs(HAGBs/LAGBs),and twin boundaries(TBs),via the scanning electron microscope-electron backscattered diffraction(SEM-EBSD)and aberration-corrected scanning transmission electron microscope(AC-STEM)investigations,combined with the first-principles calculations were systematically *** atomistic characterizations demonstrate an anisotropic Bi segregation,where severe enrich-ment of Bi atoms typically occurs at the HAGBs,while the absence of Bi adsorption prevails at LAGBs or *** particular,the segregated Bi at random HAGBs exhibited the directional bilayer adsorption,while the special symmetrical7 HAGB presented a unique Bi-rich cluster *** findings pro-vide a comprehensive experimental and computational understanding on the atomic-scale segregation of impurities in metallic materials.