A two-dimensional tetragonal structure of vanadium telluride
作者机构：School of PhysicsSun Yat-sen UniversityGuangzhou 510275China State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou 510275China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2023年第16卷第5期
页 面：7749-7755页
核心收录：
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：the National Natural Science Foundation of China(Nos.11974431,92165204,and 11832019) Guangdong Major Project of Basic and Applied Basic Research(No.2021B0301030002)
主 题：vanadium telluride molecular beam epitaxy scanning tunneling microscopy two-dimensional magnetism first-principles calculation
摘 要：The family of vanadium chalcogenides with variable stoichiometry and abundant crystallographic structures are promising platforms for realizing exotic emergent ***,we report on a novel two-dimensional(2D)tetragonal structure of vanadium telluride(VTe)grown by molecular beam *** atomic structures and electronic properties are revealed by scanning tunneling microscopy and first-principles *** from the hexagonal or trigonal lattices of 2D VTe_(2),the 2D VTe with a V:Te ratio of 1:1 exhibits an uncommon square ***-zero differential conductivity at the Fermi energy detected by scanning tunneling spectroscopy reveals the metallic feature of ***,Friedel oscillations are observed near chiral point defects and domain walls,illustrating the itinerant nature of the electrons close to the Fermi *** firstprinciples structure searches identify a 2D body-centered cubic(bcc)-like structure with a favorable formation energy to be the candidate of the metallic phase of the tetragonal VTe obtained *** on our calculations the 2D bcc-like structure possesses a strong 2D antiferromagnetic *** work enriches the family of vanadium chalcogenides and provides a possible 2D antiferromagnetic material for fabricating advanced spintronic devices.
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