Improving open-circuit voltage and short-circuit current of high-efficiency silicon-based planar heterojunction solar cells by combining V_(2)O_(5)with PEDOT:PSS

作     者：Zhiting Luo Chen Yang Xiuhua Chen Wenhui Ma Shaoyuan Li Kaixin Fu Zhiting Luo;Chen Yang;Xiuhua Chen;Wenhui Ma;Shaoyuan Li;Kaixin Fu

作者机构：School of Materials and EnergyYunnan UniversityYunnan650500China Yunnan Silicon Materials Engineering Technology Research CenterKunming University of Science and Technology650093China National Joint International Research Center for Optoelectronic Energy MaterialsYunnan UniversityYunnan650500China 

出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)

年 卷 期：2023年第9卷第3期

页      面：438-446页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.52164050,51762043,61764009,51974143) National Key R&D Program of China(No.2018YFC1901801,No.2018YFC1901805) Major Science and Technology Project of Yunnan Province(202202AB080010,2019ZE00703) Yunnan University“Double First-class”Construction Joint Special Project-major project(202201BF070001-018). 

主　　题：Si PEDOT:PSS Heterojunction photovoltaic devices V_(2)O_(5)-IPA High conductivity Semiconductor film 

摘      要：In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.