Effect of Magnetic Field on a p-Type δ-Doped GaAs Layer

作     者：E. OZTURK 

作者机构：Department of Physics Cumhuriyet University Sivas 58140 Turkey 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第7期

页      面：233-236页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Scientific Research Project Fund of Cumhuriyet University under the project number 

主　　题：Magnetic field Energy Fields Computers Political systems 

摘      要：The energy levels of holes in a p-type δ-doped GaAs structure under a magnetic field are theoretically calculated within the framework of the effective mass approximation for a uniform aceeptor distribution. The electronic structure is calculated by solving the Schrodinger and Poisson equations self-consistently. The effect of the magnetic field on the potential profile changes the degree of the confinement and localization, and thus this behavior can be used to study these systems in regions of interest, without the need to grow many different samples. It is found that the heavy-hole subbands contain many more energy states than the light-hole ones; the population of the heavy-hole levels represents approximately 91 % of all the carriers without magnetic field. With increasing magnetic field the total population of the heavy-holes increases and the number of filled states changes.