Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

作     者：Aritra Acharyya Suranjana Banerjee J.P.Banerjee 

作者机构：Institute of Radio Physics and Electronics University of Calcutta Academy of Technology West Bengal University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第3期

页      面：39-49页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：diamond IMPATTs DDR large signal simulation millimeter wave terahertz 

摘      要：An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both millimetre-wave（mm-wave） and terahertz（THz） frequencies. A rigorous large-signal（L-S） simulation based on the non-sinusoidal voltage excitation（NSVE） model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%*** diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.