Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

作     者：钟健 姚尧 郑越 杨帆 倪毅强 贺致远 沈震 周桂林 周德秋 吴志盛 张伯君 刘扬 

作者机构：School of Physics and EngineeringInstitute of Power Electronics and Control TechnologySun Yat-Sen University State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第9期

页      面：479-483页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039) the National Basic Research Program of China(Grant Nos.2010CB923200 and 2011CB301903) the Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20110171110021) the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260) the National High Technology Research and Development Program of China(Grant No.2014AA032606) the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013) the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17) 

主　　题：AlGaN/GaN Schottky barrier diodes recessed anode etching damage tunneling 

摘      要：The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF *** on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.