Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

作     者：浮宗元 张剑驰 胡静航 蒋玉龙 丁士进 朱国栋 

作者机构：Department of Materials Science Fudan University School Microelectronics Fudan University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第5期

页      面：597-605页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key Technologies R&D Program,China(Grant No.2009ZX02302-002) the National Natural Science Foundation of China(Grant Nos.61376108,61076076,and 61076068) NSAF,China(Grant No.U1430106) the Science and Technology Commission of Shanghai Municipality,China(Grant No.13NM1400600) Zhuo Xue Plan in Fudan University,China 

主　　题：organic ferroelectric field-effect transistors polarization fatigue ferroelectric switching 

摘      要：Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.