Back contact interfacial modification mechanism in highly-efficient antimony selenide thin-film solar cells

作     者：Junhui Lin Guojie Chen Nafees Ahmad Muhammad Ishaq Shuo Chen Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Guangxing Liang Junhui Lin;Guojie Chen;Nafees Ahmad;Muhammad Ishaq;Shuo Chen;Zhenghua Su;Ping Fan;Xianghua Zhang;Yi Zhang;Guangxing Liang

作者机构：Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060GuangdongChina Institute of Fundamental and Frontier ScienceUniversity of Electronic Science and Technology of ChinaChengdu 610054SichuanChina Univ RennesCNRSISCR(Institut des Sciences Chimiques de Rennes)UMR 6226Rennes F-35000France Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and TechnologyNankai UniversityTianjin 300350China 

出 版 物：《Journal of Energy Chemistry》 (能源化学（英文版）)

年 卷 期：2023年第80卷第5期

页      面：256-264,I0007页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(62074102) the Guangdong Basic and Applied Basic Research Foundation(2022A1515010979) the Key Project of Department of Education of Guangdong Province(2018KZDXM059) the Science and Technology plan project of Shenzhen(20220808165025003) 

主　　题：Sb_(2)Se_(3)solar cells MoO_(2)intermediate layer Back contact Defects 

摘      要：Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several *** properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar ***,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar *** this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were *** growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable *** MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in ***,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.