Phase-controlled van der Waals growth of wafer-scale 2D MoTe_(2) layers for integrated high-sensitivity broadband infrared photodetection
作者机构：School of Physics and MicroelectronicsKey Laboratory of Material Physics Ministry of EducationZhengzhou UniversityZhengzhouHenan 450052China Department of Electrical and Computer EngineeringUniversity of California San DiegoLa JollaCA 92093USA Institute of NanophotonicsJinan UniversityGuangzhouGuangdong 511443China Institute of Functional Nano and Soft Materials(FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional Materials and DevicesSoochow UniversitySuzhouJiangsu 215123China
出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)
年 卷 期：2023年第12卷第1期
页 面：77-88页
核心收录：
学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学]
基 金：supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,52225303,91833303,and 12174349) Natural Science Foundation of Henan Province,China(No.202300410376) Henan provincial key science and technology research projects(No.212102210130)
主 题：hinder enable difficulty
摘 要：Being capable of sensing broadband infrared(IR)light is vitally important for wide-ranging applications from fundamental science to industrial ***-dimensional(2D)topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion ***,the low charge separation efficiency,high noise level,and on-chip integration difficulty of these semimetals significantly hinder their further technological ***,we demonstrate a facile thermal-assisted tellurization route for the van der Waals(vdW)growth of wafer-scale phase-controlled 2D MoTe_(2)***,the type-ⅡWeyl semimetal 1T -MoTe_(2)features a unique orthorhombic lattice structure with a broken inversion symmetry,which ensures efficient carrier transportation and thus reduces the carrier *** characteristic is a key merit for the well-designed 1T -MoTe_(2)/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6μm and a large room temperature specific detectivity of over 108 Jones in the mid-infrared(MIR)***,the large-area synthesis of 2D MoTe_(2)layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device *** work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.
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