Global optimization of process parameters for low-temperature SiN_(x) based on orthogonal experiments
作者机构：School of Materials Science and EngineeringShanghai UniversityShanghai200444People's Republic of China Key Laboratory of Advanced Display and System ApplicationsMinistry of EducationShanghai UniversityShanghai200072People's Republic of China Huawei Technologies Co.LtdShanghai200120People's Republic of China
出 版 物：《Advances in Manufacturing》 (先进制造进展（英文版）)
年 卷 期：2023年第11卷第2期
页 面：181-190页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：financially supported by the National Key Research and Development Program of China(Grant No.2020YFB2008501) Huawei Technologies Co.,Ltd
主 题：Plasma-enhanced chemical vapor deposition(PECVD) Low-temperature silicon nitride(SiNx) Flexible display Taguchi orthogonal experiment Process optimization
摘 要：Low-temperature silicon nitride(SiNx)films deposited by plasma-enhanced chemical vapor deposition(PECVD)have huge application potential in the flexible ***,the applicability of SiNx largely depends on the film’s general properties,including flexibility,deposition rate,residual stress,elastic modulus,fracture strain,dielectric constant,refraction index,*** optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process ***,an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor *** of all,the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics,including radio frequency(RF)power,pressure,silane flow rate,ammonia flow rate and nitrogen flow ***,the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate,residual stress,dielectric constant,elastic modulus,fracture strain,refractive ***,the optimal solution of the SiNx film was finally obtained and verified.
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