Crystallographic Parameters and Band Gap of CdSxSe1-x Mixed Crystals

作     者：Abdullah A. Al-Bassam Usamh A. Elani 

作者机构：Physics Department Faculty of Science King Saud University Riyadh 11451 Saudi Arabia 

出 版 物：《Journal of Energy and Power Engineering》 (能源与动力工程（美国大卫英文）)

年 卷 期：2014年第8卷第4期

页      面：770-774页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Thin films mixed crystals lattice parameter semiconductors devices. 

摘      要：Crystals of CdSxSe1-x alloys have been grown from the vapour phase. Some of the physical properties, such as lattice parameters, crystal structure and x-rays data of CdSxSe1-x alloys were determined using x-ray diffractometry. X-ray diffractometry has shown that CdS-CdSe mixed crystals had the wurtzite structure for all compositions between CdS and CdSe. The lattice parameters （both a and c） were found to show a linear dependence with composition. The dependence of the lattice parameters of a and c on composition can be expressed as： a（x） = 4.165 ＋ 0.16x; c（x） = 6.713 ＋ 0.27x. The variation of band gap with composition was determined for these samples from optical absorption measurements, which showed that the band gap varied smoothly and monotonically, but not linearly over the composition range typical results were found between 2.42-1.74 eV at room temperature.