Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

作     者：宋庆文 张玉明 张义门 张倩 吕红亮 

作者机构：School of MicroelectronicsKey Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第8期

页      面：548-553页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080801[工学-电机与电器] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the 13115 Innovation Engineering of Shaanxi Province of China(Grant No.2008ZDKG-30) 

主　　题：junction barrier Schottky rectifier 4H-SiC breakdown voltage specific on-resistance 

摘      要：This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.