Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

作     者：张寒洁 吕斌 陆赟豪 黄寒 李海洋 鲍世宁 何丕模 

作者机构：Department of Physics Zhejiang University Hangzhou 310027 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2006年第15卷第8期

页      面：1892-1895页

核心收录：

学科分类：07[理学] 070201[理学-理论物理] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 10274072)  and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20030335017) 

主　　题：ruthenium oxide growth scanning tunnelling microscope 

摘      要：This paper reports that the growth of RuO2（110） thin layer growth on Ru（0001） has been investigated by means of scanning tunnelling microscope （STM）. The STM images showed a domain structure with three rotational domains of RuO2（110） rotated by an angle of 120°. The as-grown RuO2（110） thin layer is expanded from the bulk-truncated RuO2（110） due to the large mismatch between RuO2（110） and the Ru（0001） substrate. The results also indicate that growth of RuO2（110） thin layer on the Ru（0001） substrate by oxidation tends first to formation of the Ru-O （oxygen） chains in the [001] direction of RuO2 （110）.