Low-Cost UV-IR Dual Band Detector Using Nonporous ZnO Film Sensitized by PbS Quantum Dots

作     者：邵佳锋 A. G. U. Perera P. V. V. Jayaweera 贺德衍 SHAO Jia-Feng;A. G. U. Perera;P. V. V. Jayaweera;HE De-Yan

作者机构：School of Physics Science and Technology Lanzhou University Lanzhou 730000 Department of Physics and Astronomy Georgia State University Atlanta Georgia 30303 USA 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第2期

页      面：260-262页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

主　　题：Chinese climate network complex systems small world community 

摘      要：A low-cost photoconductive dual-band detector was prepared using a nanoporous ZnO film sensitized by PbS quantum dots （QDs）. At room temperature the device shows a UV response in the wavelength range of 200-400 nm with a 370 nm peak responsivity of 4.0×105 V/W and a vis-NIR response from 500 to 1400 nm with a 700 nm peak responsivity of 5.4×105 V/W. By increasing the size of the PbS QD, the response can be extended up to 2.9 μm. It is suggested that the UV response is a result of interband absorption of UV radiation by ZnO and the IR response comes from the absorption of PbS QDs.