Preparation of Heavily Te-doped GaSb Single Crystal

作     者：Li Jianming,Tu Hailing,Zheng Ansheng and Luo Zhiqiang(General Research Institute for Nonferrous Metals,Beijing 100088,China) 

作者机构：General Research Institute for Nonferrous MetalsBeijing 100088China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2000年第19卷第3期

页      面：186-页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：GaSb Effective distribution coefficient Etch pit density 

摘      要：Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling *** Te doped GaSb single crystals can be prepared on small scale with good reproducibility by using special filtering *** the Te concentrations calculated from the Hall measurement,the distribution coefficient of tellurium in GaSb was estimated to be about 0.38 under our growth *** etch pit density (EPD) examination in GaSb showed that the profile of EPD is of W shape in growth plane and the value of average EPD is about 1.0×10 -3 cm -2 along growth direction.