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Super high maximum on-state currents in 2D transistors

Super high maximum on-state currents in 2D transistors

作     者:Xiaotian Sun Qiuhui Li Ruge Quhe Yangyang Wang Jing Lu Xiaotian Sun;Qiuhui Li;Ruge Quhe;Yangyang Wang;Jing Lu

作者机构:College of Chemistry and Chemical Engineeringand Henan Key Laboratory of Function-Oriented Porous MaterialsLuoyang Normal UniversityLuoyang 471934China State Key Laboratory of Information Photonics and Optical Communications and School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China State Key Laboratory for Mesoscopic Physics and School of PhysicsPeking UniversityBeijing 100871China Qian Xuesen Laboratory of Space TechnologyChina Academy of Space TechnologyBeijing 100094China Collaborative Innovation Center of Quantum MatterBeijing 100871China Beijing Key Laboratory for Magnetoelectric Materials and Devices(BKL-MEMD)Peking UniversityBeijing 100871China Peking University Yangtze Delta Institute of OptoelectronicsNantong 226010China Key Laboratory for the Physics and Chemistry of NanodevicesPeking UniversityBeijing 100871China 

出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期:2022年第43卷第12期

页      面:9-11页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:supported by the National Natural Science Foundation of China(91964101,12274002) the Fundamental Research Funds for the Central Universities,the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),the Foundation of He’nan Educational Committee(23A430015) the open research fund of National Center for International Research on Intelligent Nano-Materials and Detection Technology in Environmental Protection(SDGH2106) the High-performance Computing Platform of Peking University and the MatCloud+high throughput materials simulation engine 

主  题:transistors replace state 

摘      要:Two-dimensional(2D)materials have been recognized as a type of potential channel material to replace silicon in future field-effect transistors(FETs)by the International Technology Roadmap for Semiconductors(ITRS)and its succesor the International Roadmap for Devices and Systems(IRDS)[1−4].Substantial first principle quantum transport simulations have predicted that many 2D transistors,including those with MoS2,WSe2,phosphorene,and Bi2O2Se channels,own excellent device performance and are able to extend Moore’s law down to the sub-10 nm scale[4].

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