All-inorganic transparent Hf_(0.85)Ce_(0.15)O_(2)ferroelectric thin films with high flexibility and stability

作     者：Sheng-Tao Mo Kai-Ming Feng Jing-Lin Pang Kuo Ouyang Li-Mei Jiang Qiong Yang Biao Zhang Jie Jiang Sheng-Tao Mo;Kai-Ming Feng;Jing-Lin Pang;Kuo Ouyang;Li-Mei Jiang;Qiong Yang;Biao Zhang;Jie Jiang

作者机构：School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China Hunan Provincial Key Laboratory of Thin Film Materials and DevicesXiangtan UniversityXiangtan 411105China Key Laboratory of Low Dimensional Materials and Application TechnologyMinistry of EducationXiangtan UniversityXiangtan 411105China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2023年第16卷第4期

页      面：5065-5072页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.11902285 and 12072307) the Department of Education Project of Hunan Province,China(Nos.21B0112 and 19A106) the Science and Technology Agency Project of Hunan Province,China(No.2020JJ5526) the China Postdoctoral Science Foundation(No.2019TQ0273) the Outstanding Youth Science Foundation of Hunan Province,China(No.2021JJ20041) 

主　　题：flexible Hf_(0.85)Ce_(0.15)O_(2)thin films transparent thin films ferroelectric properties 

摘      要：Electronic devices that are transparent and flexible have a wide range of applications in the domains of vital sign parameter monitoring,health management,and so *** memory is a revolutionary nonvolatile memory that is ideal for data storage and processing in transparent flexible electronic *** this study,Ce-doped hafnium oxide ferroelectric thin film is manufactured on mica substrate by the chemical solution deposition with transparent indium tin oxide(ITO)thin films as the bottom *** transmittance of mica/ITO/Hf_(0.85)Ce_(0.15)O_(2)thin film is over 80%.The 2Pr of the transparent flexible Hf_(0.85)Ce_(0.15)O_(2)ferroelectric thin film is increased by about 22.4%and the Ec is reduced by 26.7%compared with those of Hf_(0.85)Ce_(0.15)O_(2)ferroelectric thin film grown on p+-Si *** transparent flexible Hf_(0.85)Ce_(0.15)O_(2)ferroelectric thin film can remain keeping good quality when being bent under±2.5 mm bending ***,degradation of polarization,retention,and endurance performance was not obvious even at a bending radius of 5.0 mm after 104 bending *** research provides a new strategy and an important experimental basis for the development and implementation of transparent flexible ferroelectric memories.