Emitter layer optimization in heterojunction bifacial silicon solar cells
Emitter layer optimization in heterojunction bifacial silicon solar cells作者机构:Department of PhysicsJordan University of Science and TechnologyIrbid 22110Jordan
出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))
年 卷 期:2022年第43卷第12期
页 面:65-71页
核心收录:
学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
主 题:HIT solar cells bifacial solar cells nano-crystalline silicon films gradient doping parameter optimization
摘 要:Silicon solar cells continue to dominate the market,due to the abundance of silicon and their acceptable *** heterojunction with intrinsic thin layer(HIT)structure is now the dominant *** the efficiency of these cells could expand the development choices for HIT solar *** presented a detailed investigation of the emitter a-Si:H(n)lay-er of a p-type bifacial HIT solar cell in terms of characteristic parameters which include layer doping concentration,thickness,band gap width,electron affinity,hole mobility,and so *** cell composition:(ZnO/nc-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/nc-Si:H(p)/ZnO).The results reveal optimal values for the investigated parameters,for which the highest computed efficiency is 26.45%when lighted from the top only and 21.21%when illuminated from the back only.