Transient analysis on surface heated piezoelectric semiconductor plate lying on rigid substrate
Transient analysis on surface heated piezoelectric semiconductor plate lying on rigid substrate作者机构:State Key Laboratory for Strength and Vibration of Mechanical StructuresSchool of Aerospace EngineeringXi'an Jiaotong UniversityXi'an 710049China
出 版 物:《Applied Mathematics and Mechanics(English Edition)》 (应用数学和力学(英文版))
年 卷 期:2022年第43卷第12期
页 面:1841-1856页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:Project supported by the National Natural Science Foundation of China (Nos.12072253 and 62074125)
主 题:thermo-electro-elastic coupling piezoelectric semiconductor(PS) surface heating transient analysis
摘 要:Based on the thermo-electro-elastic coupling theory,the mathematical model for a surface heated piezoelectric semiconductor(PS)plate is developed in the time *** the direct and inverse Laplace transformations to the established model,the mechanical and electrical responses are *** comparison between the analytical solution and the finite element method(FEM)is conducted,which illustrates the validity of the *** calculated results show that the maximum values of the mechanical and electrical fields appear at the heating ***,the perturbation carriers tend to concentrate in the zone near the heating surface under the given boundary *** can also be observed that the heating induced elastic wave leads to jumps for the electric potential and perturbation carrier density at the *** the thermal relaxation time is introduced,all the field quantities become smaller because of the thermal lagging ***,it can be found that the thermal relaxation time can describe the smooth variation at the jump ***,for a plate with P-N junction,the effect of the interface position on the electrical response is *** effects of the initial carrier density on the electrical properties are discussed in *** conclusions in this article can be the guidance for the design of PS devices serving in thermal environment.