The temperature dependence of optical properties of InGaN alloys

作     者：ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou 

作者机构：Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsDepartment of PhysicsNanjing National Laboratory of MicrostructuresNanjing UniversityNanjing 210093China School of Information and Communication EngineeringTianjin Polytechnics UniversityTianjin 300160China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2012年第55卷第3期

页      面：396-399页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

基　　金：supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301901) the National Natural Science Foundation of China (Grant Nos. 60820106003,60990311 and 60906025) the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019 and BK2009255) the Research Funds from NJU-Yangzhou Institute of Opto-electronics 

主　　题：InGaN photoluminescence full width at half maximum 

摘      要：In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature *** was found that both phenomena are relative to localization *** addition,the degree of localization effects in three samples was investigated using the band-tail *** findings are presented in this paper.