Poly(arylene ether nitrile)Dielectric Film Modified by Bi_(2)S_(3)/rGO-CN Fillers for High Temperature Resistant Electronics Fields
Poly(arylene ether nitrile) Dielectric Film Modified by Bi2S3/rGO-CN Fillers for High Temperature Resistant Electronics Fields作者机构:School of Materials and EnergyUniversity of Electronic Science and Technology of ChinaChengdu610054China Sichuan Province Engineering Technology Research Center of Novel CN Polymeric MaterialsChengdu610054China
出 版 物:《Chinese Journal of Polymer Science》 (高分子科学(英文版))
年 卷 期:2022年第40卷第11期
页 面:1441-1450页
核心收录:
学科分类:080801[工学-电机与电器] 0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:financially supported by the National Natural Science Foundation of China(Nos.52073039,51903029,21805027,51803020 and 51773028) International Science and Technology Cooperation Project(No.52011530027) Major Special Projects of Sichuan Province(Nos.2020YFG0270,2020ZDZX0020,2019ZDZX0027 and 2019ZDZX0016) the Fundamental Research Funds for the Central Universities(No.ZYGX2019J026) Sichuan Science and Technology Program(Nos.2019YJ0197,2019YFG0056 and 2020YFG0100) International Science and Technology Cooperation Project from Chengdu municipal government(No.2019-GH02-00037-HZ)
主 题:Poly(arylene ether nitrile) Bismuth sulfide Graphene oxide High-temperature-resistant Dielectric properties
摘 要:High-quality film capacitors are widely used in many fields such as new energy vehicles,electronic communications,etc.,due to their advantages in wide frequency response and low dielectric *** dielectric film is a crucial part of the film capacitor,and its properties have an important impact on the performance and use conditions of the film *** this work,a novel high-temperature-resistant dielectric film was ***,the Bi_(2)S_(3)/rGO-CN fillers were prepared by hydrothermal method combined with cyanation treatment,and then added to the poly(arylene ether nitrile)(PEN)matrix to prepare the dielectric film materials(PEN/Bi_(2)S_(3)/rGO-CN).After high temperature treatment,the fillers Bi_(2)S_(3)/rGO-CN reacted with the PEN matrix,and the composites materials transformed into a thermosetting hybrid film(PEN-Bi_(2)S_(3)/rGO)with gel content of 97.88%.The prepared hybrid dielectric films did not decompose significantly before 400℃,and showed a glass transition temperature(Tg)of up to 252.4℃,which could increase the effective use temperature of the *** with the composite films without heat treatment,they exhibit better mechanical properties,with further improvement in tensile strength and elastic modulus,and a decrease in elongation at *** dielectric constant of the hybrid films can be up to 6.8 while the dielectric loss is only about 0.02 at 1 ***,the hybrid films showed excellent dielectric stability during temperature changes,and remain relatively stable before 250℃,which is suitable as a high-temperature-resistant high-dielectric material and is more advantageous for practical applications.