Electrical switching of spin-polarized current in multiferroic tunneling junctions

作     者：Ligong Zhang Yuchen Wang Xiaoyan Liu Fei Liu 

作者机构：School of Integrated CircuitsPeking University100871BeijingChina Beijing Advanced Innovation Center for Integrated Circuits100871BeijingChina 

出 版 物：《npj Computational Materials》 (计算材料学（英文）)

年 卷 期：2022年第8卷第1期

页      面：1877-1885页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was supported by the National Key Research and Development Program of China under Grant 2019YFB2205100 the National Natural Science Foundation of China under Grant 61974003 and the 111 Project(B18001) 

主　　题：mechanism. polarized tunneling 

摘      要：The generation and manipulation of spin-polarized current are critical for spintronic *** this work,we propose a mechanism to generate and switch spin-polarized current by an electric field in multiferroic tunnel junctions(MFTJs),with symmetric interface terminations in an antiparallel magnetic *** such devices,different spin tunneling barriers are realized by the magnetoelectric coupling effect,resulting in a spin-polarized *** reversing the electric polarization of the ferroelectric layer,the spin polarization of current is efficiently switched for the exchange of spin tunneling *** first-principles quantum transport calculations,we show that a highly spin-polarized current is obtained and manipulated by the electric field in hafnia-based MFTJs based on the proposed *** also demonstrate that four resistance states are realized in Co/HfO_(2)/Co junctions with asymmetric interface *** work provides a promising approach for realizing the electrical control of spin current for spintronic applications.