Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

作     者：Runjiang Shen Yanghua Lu Xutao Yu Qi Ge Huiming Zhong Shisheng Lin Runjiang Shen;Yanghua Lu;Xutao Yu;Qi Ge;Huiming Zhong;Shisheng Lin

作者机构：Colege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Chongqing 2D Material InstituteChongqing 410020China Department EmergencyThe Seond Aliated Hopital Zhejiang Universy Shoolof Medicin Zhejiang Univery Hangzhou 310009China State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhou 310027China Hangzhou Gelanfeng Technology Co.Ltd.Hangzhou 310051China 

出 版 物：《Research》 (研究（英文）)

年 卷 期：2023年第2022卷第2期

页      面：297-304页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：S Lin thanks the support from the National Natural Science Foundation of China(Nos.51202216,51551203,and 61774135) the Special Foundation of Young Professor of Zhejiang University(Grant No.2013QNA5007) the Outstanding Youth Fund of Zhejiang Natural Science Foundation of China(Grant LR21F040001) Y Lu thanks the support from the China Postdoctoral Science Foundation(2021M692767) 

主　　题：diode insulator Broadband 

摘      要：The excitation,rebound,and transport process of hot carriers(HCs)inside dynamic diode(DD)based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are ***,the carrier dynamics of DD is totally different from the static diode,which may bring a subverting insight of insulators.