Surface metallization of PTFE and PTFE composites by ion implantation for low-background electronic substrates in rare-event detection experiments
Surface metallization of PTFE and PTFE composites by ion implantation for low-background electronic substrates in rare-event detection experiments作者机构:College of Nuclear Science and TechnologyBeijing Normal UniversityJoint Laboratory of Jinping Ultra-low Radiation Background Measurement of Ministry of Ecology and Environment Beijing Normal UniversityKey Laboratory of Beam Technology of Ministry of EducationBeijing Normal UniversityBeijing100875China Beijing Radiation CenterBeijing100875China Department of Engineering PhysicsKey Laboratory of Particle and Radiation Imaging of Ministry of EducationTsinghua UniversityBeijing100084China Joint Research CenterNuctech Company LimitedBeijing100084China
出 版 物:《Nuclear Science and Techniques》 (核技术(英文))
年 卷 期:2022年第33卷第7期
页 面:37-47页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:supported by the National Natural Science Foundation of China(Nos.12141502 and 12005017)
主 题:Surface modification Polytetrafluoroethylene Ion implantation Surface metallization Low temperature resistance
摘 要:Polytetrafluoroethylene(PTFE)is a low-background polymer that is applied to several applications in rare-event detection and underground low-background ***-based electronic substrates are important for reducing the detection limit of high-purity germanium detectors and scintillator calorimeters,which are widely applied in dark matter and 0υββdetection *** traditional adhesive bonding method between PTFE and copper is not conducive to working in liquid nitrogen and extremely low-temperature *** avoid adhesive bonding,PTFE must be processed for surface metallization owing to the mismatch between the PTFE and copper conductive ***-background PTFE matrix composites(m-PTFE)were selected to improve the electrical and mechanical properties of PTFE by introducing SiO_(2)/TiO_(2) *** microstructures,surface elements,and electrical properties of PTFE and m-PTFE were characterized and analyzed following ion *** and m-PTFE surfaces were found to be broken,degraded,and cross-linked by ion implantation,resulting in C=C conjugated double bonds,increased surface energy,and increased surface ***,the surface roughness,bond strength,and conjugated double bonds of m-PTFE were significantly more intense than those of ***,the interface bonding theory between PTFE and the metal copper foil was analyzed using the direct metallization ***,the peel strength of the optimized electronic substrates was higher than that of the industrial standard at extremely low temperatures,while maintaining excellent electrical properties.