Fabrication of metal suspending nanostructures by nanoimprint lithography(NIL) and isotropic reactive ion etching(RIE)
Fabrication of metal suspending nanostructures by nanoimprint lithography(NIL) and isotropic reactive ion etching(RIE)作者机构:Center for Nanoscale Science and Technology(CNST)College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Nanotechnology Industrialization Base of ChinaTianjin 300457China
出 版 物:《Science China(Technological Sciences)》 (中国科学(技术科学英文版))
年 卷 期:2009年第52卷第5期
页 面:1181-1186页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Supported by the National Natural Science Foundation of China (Grant No. 20573002) the Major State Basic Research Development Program of China (973Pprogram) (Grant No. 2001CB6105)
主 题:suspending nanostructure fabrication nanoimprint lithography(NIL) isotropic reactive ion etching(RIE)
摘 要:We report herein a rational approach for fabricating metal suspending nanostructures by nanoimprint lithography(NIL) and isotropic reactive ion etching(RIE).The approach comprises three principal steps:(1) mold fabrication,(2) structure replication by NIL,and(3) suspending nanostructures creation by isotropic *** this approach,suspending nanostructures with Au,Au/Ti or Ti/Au bilayers,and Au/Ti/Au sandwiched structures are *** Au nanostructures,straight suspending nanostructures can be obtained when the thickness of Au film is up to 50 nm for nano-bridge and 90 nm for nano-finger *** the thickness of Au is below 50 nm for nano-bridge and 90 nm for nano-finger,the Au suspending nanostructures bend upward as a result of the mismatch of thermal expansion between the thin Au films and Si *** leads to residual stresses in the thin Au *** Au/Ti or Ti/Au bilayers nanostructures,the cantilevers bend toward Au film,since Au has a larger thermal expansion coefficient than that of *** in the case of sandwich structures,straight suspending nanostructures are obtained,this may be due to the balance of residual stress between the thin films.