Homologous gradient heterostructure-based artificial synapses for neuromorphic computation

作     者：Changjiu Teng Qiangmin Yu Yujie Sun Baofu Ding Wenjun Chen Zehao Zhang Bilu Liu Hui-Ming Cheng 

作者机构：Shenzhen Geim Graphene CenterTsinghua-Berkeley Shenzhen Institute and Institute of Materials ResearchShenzhen International Graduate SchoolTsinghua UniversityShenzhenPeople's Republic of China Faculty of Materials Science and Engineering/Institute of Technology for Carbon NeutralityShenzhen Institute of Advanced TechnologyChinese Academy of ScienceShenzhenPeople's Republic of China School of Electronic and Information EngineeringFoshan UniversityFoshanPeople's Republic of China Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyangPeople's Republic of China 

出 版 物：《InfoMat》 (信息材料（英文）)

年 卷 期：2023年第5卷第1期

页      面：95-105页

核心收录：

学科分类：12[管理学] 1201[管理学-管理科学与工程(可授管理学、工学学位)] 081104[工学-模式识别与智能系统] 08[工学] 0835[工学-软件工程] 0811[工学-控制科学与工程] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：We thank the financial support from the National Science Fund for Distinguished Young Scholars(No.52125309) the National Natural Science Foundation of China(Nos.51991343,52188101,51920105002,and 51991340) Guang-dong Innovative and Entrepreneurial Research Team Pro-gram(No.2017ZT07C341) the Shenzhen Basic Research Program(Nos.JCYJ20200109144616617 and JCYJ20200109144620815) 

主　　题：artificial synapses broad-frequency range gradient heterostructures homologous memristors neuromorphic computation 

摘      要：Gradient heterostructure is one of fundamental interfaces and provides an effective platform to achieve gradually changed properties in mechanics,optics,and *** different types of heterostructures,the gradient one may provide multiple resistive states and immobilized conductive fila-ments,offering great prospect for fabricating memristors with both high neuromorphic computation capability and ***,we invent a memristor based on a homologous gradient heterostructure(HGHS),compris-ing a conductive transition metal dichalcogenide and an insulating homolo-gous metal *** made of Ta–TaS_(x)O_(y)–TaS 2 HGHS exhibits continuous potentiation/depression behavior and repeatable forward/backward scanning in the read-voltage range,which are dominated by multi-ple resistive states and immobilized conductive filaments in HGHS,***,the continuous potentiation/depression behavior makes the memristor serve as a synapse,featuring broad-frequency response(10^(-1)–10^(5) Hz,covering 106 frequency range)and multiple-mode learning(enhanced,depressed,and random-level modes)based on its natural and moti-vated forgetting *** HGHS-based memristor also shows good unifor-mity for 5?7 device *** work paves a way to achieve high-performance integrated memristors for future artificial neuromorphic computation.