Microprecipitates in Semi-Insulating GaAs Single Crystals

作     者：Mo Peigen Zhu Jian Wu Ju Shanghai Institute of Metallurgy,Academia Sinica 

作者机构：Acad Sinica 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：1989年第9卷第1期

页      面：23-27页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：In GaAs Microprecipitates in Semi-Insulating GaAs Single Crystals 

摘      要：The microprecipitates in the as-grown undoped and In-doped semi-insulating GaAs single crystals have been ex- amined by JEM 200 CX transmission electron *** microprecipitates consist of GaAs polycrystalline grains of 5～100nm in size have been evidenced in dislocated *** dispersive X-ray analysis shows that the mieropreeipitates are predominately arsenic-rich *** As/Ga atomic ratio of the microprecipitates in In-doped crystal is higher than that of undoped *** is suggested that the formation of the microprecipitates may be induced by the local fluctuation of compositional undercooling during crystal growth.