Photo-Doped Active Electrically Controlled Terahertz Modulator
Photo-Doped Active Electrically Controlled Terahertz Modulator作者机构:Department of PhysicsCapital Normal University
出 版 物:《Journal of Electronic Science and Technology》 (电子科技学刊(英文版))
年 卷 期:2015年第13卷第2期
页 面:113-116页
核心收录:
学科分类:080902[工学-电路与系统] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:supported by the Natural Science Foundation of Beijing under Grant No.4144069 the Science and Technology Project of Beijing Municipal Education Commission under Grant No.KM201410028004
主 题:modulator terahertz saturation electrically doping modulated Controlled excited monolayer tunable
摘 要:We demonstrate an electric-controlled terahertz(THz) modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave(CW)system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.