Structural engineering of transition-metal nitrides for surfaceenhanced Raman scattering chips
作者机构：School of PhysicsSoutheast UniversityNanjing 211189China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2022年第15卷第4期
页 面：3794-3803页
核心收录：
学科分类：0710[理学-生物学] 08[工学] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学]
基 金：This work was supported by the National Natural Science Foundation of China(No.11874108).
主 题：structural engineering transition-metal nitrides(TMN) surface-enhanced Raman scattering(SERS) nanocavity heterostructure
摘 要：Noble-metal-free surface-enhanced Raman scattering(SERS)substrates have attracted great attention for their abundant sources,good signal uniformity,superior biocompatibility,and high chemical stability.However,the lack of controllable synthesis and fabrication of noble-metal-free substrates with high SERS activity impedes their practical applications.Herein,we propose a general strategy to fabricate a series of planar transition-metal nitride(TMN)SERS chips via an ambient temperature sputtering deposition route.For the first time,tungsten nitride(WN)and tantalum nitride(TaN)are used as SERS materials.These planar TMN chips show remarkable Raman enhancement factors(EFs)with~105 owing to efficient photoinduced charge transfer process between TMN chips and probe molecules.Further,structural engineering of these TMN chips is used to improve their SERS activity.Benefiting from the synergistic effect of charge transfer process and electric field enhancement by constructing a nanocavity structure,the Raman EF of WN nanocavity chips could be greatly improved to~1.29×10^(7),which is an order of magnitude higher than that of planar chips.Moreover,we also design the WN/monolayer MoS2 heterostructure chips.With the increase of surface electron density on the upper WN and more exciton resonance transitions in the heterostructure,a~1.94×10^(7)level EF and a 5×10^(-10)M level detection limit could be achieved.Our results provide important guidance for the structural design of ultrasensitive noble-metal-free SERS chips.
维普期刊数据库