Pristine PN junction toward atomic layer devices

作     者：Hui Xia Man Luo Wenjing Wang Hailu Wang Tianxin Li Zhen Wang Hangyu Xu Yue Chen Yong Zhou Fang Wang Runzhang Xie Peng Wang Weida Hu Wei Lu Hui Xia;Man Luo;Wenjing Wang;Hailu Wang;Tianxin Li;Zhen Wang;Hangyu Xu;Yue Chen;Yong Zhou;Fang Wang;Runzhang Xie;Peng Wang;Weida Hu;Wei Lu

作者机构：State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China University of Chinese Academy of Sciences100049 BeijingChina Jiangsu Key Laboratory of ASIC DesignSchool of Information Science and TechnologyNantong UniversityNantong 226019 JiangsuChina School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2022年第11卷第7期

页      面：1515-1522页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Natural Science Foundation of China(Grant No.11991063,62004207,61725505,621041181) Shanghai Science and Technology Comitee(Grant No.2019SHZDZX01,19XD1404100,20YF1455900,20Z1474000) Strategic Prionity Research Program of Chinese Academy of Sciences(Grant No.XDB43010200),Youth Innovation Promotion Association CAS 

主　　题：dopant tuning layer 

摘      要：In semiconductor manufacturing,PN junction is formed by introducing dopants to activate neighboring electron and hole *** avoid structural distortion and failure,it generally requires the foreign dopants localize in the designated ***,however,is challenging due to an inevitable interdiffusion *** we report a brand-new junction architecture,calledlayer PN junction,that might break through such limit and help redefine the semiconductor device *** from all existing semiconductors,we find that a variety of van der Waals materials are doping themselves from n-to p-type conductance with an increasing/decreasing *** means the capability of constructing homogeneous PN junctions in monolayers dimension/precision,with record high rectification-ratio(10^(5))and low cut-off current(1 pA).More importantly,it spawns intriguing functionalities,like gate-switchable-rectification and noise-signal decoupled *** disclosed here might open up a path to develop novel nanodevice applications,where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.