Mechanical memory operations in piezotransistive GaN microcantilevers using Au nanoparticleenhanced photoacoustic excitation

作     者：Ferhat Bayram Durga Gajula Digangana Khan Goutam Koley 

作者机构：Holcombe Department of Electrical and Computer EngineeringClemson UniversityClemsonSC 29634USA School of Electrical and Computer EngineeringGeorgia Institute of TechnologyAtlantaGA 30332USA 

出 版 物：《Microsystems & Nanoengineering》 (微系统与纳米工程（英文）)

年 卷 期：2022年第8卷第1期

页      面：161-174页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0709[理学-地质学] 0819[工学-矿业工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 

基　　金：This research was financially supported by the National Science Foundation grant numbers ECCS-1809891 and IIP-1602006. 

主　　题：excitation operations cantilever 

摘      要：Nonlinear oscillations in micro-and nanoelectromechanical systems have emerged as an exciting research area in recent years due to their promise in realizing low-power,scalable,and reconfigurable mechanical memory and logic devices.Here,we report ultralow-power mechanical memory operations utilizing the nonlinear oscillation regime of GaN microcantilevers with embedded piezotransistive AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers.Switching between the high and low oscillatory states of the nonlinear oscillation regime was demonstrated using a novel phase-controlled opto-mechanical excitation setup,utilizing a piezo actuator and a pulsed laser as the primary and secondary excitation sources,respectively.Laser-based photoacoustic excitation was amplified through plasmonic absorption in Au nanoparticles deposited on a transistor.Thus,the minimum switching energy required for reliable memory operations was reduced to less than a picojoule(pJ),which translates to one of the lowest ever reported,when normalized for mass.