Preparation of indium tin oxide targets with a high density and single phase structure by normal pressure sintering process

作     者：LIU Chen LIU Jiaxiang WANG Yue LIU Chen,LIU Jiaxiang,and WANG Yue College of Materials Science and Engineering,Beijing University of Chemical Technology,Beijing,100029,China

作者机构：College of Materials Science and Engineering Beijing University of Chemical Technology Beijing 100029 China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2011年第30卷第2期

页      面：126-130页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080706[工学-化工过程机械] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National High-Tech Research and Development Program of China(No. 2004AA303542) 

主　　题：thin films indium tin oxide (ITO) isostatic pressing sintering relative density microstructure 

摘      要：The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.