Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells

作     者：Bingbing Chen Pengyang Wang Ningyu Ren Renjie Li Ying Zhao Xiaodan Zhang Bingbing Chen;Pengyang Wang;Ningyu Ren;Renjie Li;Ying Zhao;Xiaodan Zhang

作者机构：Institute of Photoelectronic Thin Film Devices and TechnologyRenewable Energy Conversion and Storage CenterSolar Energy Conversion CenterNankai UniversityTianjin 300350China Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinTianjin 300350China Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of EducationTianjin 300350China Collaborative Innovation Center of Chemical Science and Engineering(Tianjin)Tianjin 300072China School of Physical Science and TechnologyInner Mongolia UniversityKey Laboratory of SemiconductorHohhot 010021China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2022年第43卷第5期

页      面：89-103页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the supports from National Key Research and Development Program of China(Grant No.2018YFB1500103) the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China(Grant No.B16027) Tianjin Science and Technology Project(Grant No.18ZXJMTG00220) the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63191736,ZB19500204) Natural Science Foundation of Tianjin(No.20JCQNJC02070) China Postdoctoral Scie nce Foundation(No.2020T130317) 

主　　题：atomic layer deposition tin dioxide additional buffer layer efficiency and stability inverted perovskite solar cells 

摘      要：Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition(ALD) processed tin dioxide(SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm^(2), and fill factor of 81.07%. More importantly, the compact and stable SnO_(2) film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO_(2) provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.