Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach

作     者：Kaicheng Jia Ziteng Ma Wendong Wang Yongliang Wen Huanxin Li Yeshu Zhu Jiawei Yang Yuqing Song Jiaxin Shao Xiaoting Liu Qi Lu Yixuan Zhao Jianbo Yin Luzhao Sun Hailin Peng Jincan Zhang Li Lin Zhongfan Liu Kaicheng Jia;Ziteng Ma;Wendong Wang;Yongliang Wen;Huanxin Li;Yeshu Zhu;Jiawei Yang;Yuqing Song;Jiaxin Shao;Xiaoting Liu;Qi Lu;Yixuan Zhao;Jianbo Yin;Luzhao Sun;Hailin Peng;Jincan Zhang;Li Lin;Zhongfan Liu

作者机构：Center for NanochemistryBeijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular ScienceCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing Graphene InstituteBeijing 100095China School of Physics and AstronomyUniversity of ManchesterManchester M139PLUK State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Department of EngineeringUniversity of CambridgeCambridge CB30FAUK Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing 100871China Key Laboratory of Opto-Electronics TechnologyMinistry of EducationCollege of Electronic Science and TechnologyFaculty of Information TechnologyBeijing University of TechnologyBeijing 100024China State Key Laboratory of Heavy Oil ProcessingCollege of ScienceChina University of PetroleumBeijing 102249China School of Materials Science and EngineeringPeking UniversityBeijing 100871China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第11期

页      面：9683-9688页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National Natural Science Foundation of China(Nos.T2188101,21525310,and 52072042) the National Key R&D Program of China(No.2018YFA0703502) Beijing National Laboratory for Molecular Sciences(No.BNLMS-CXTD-202001) Beijing Municipal Science&Technology Commission(Nos.Z181100004818001,Z18110300480001,Z18110300480002,Z191100000819005,Z191100000819007,and Z201100008720005) 

主　　题：graphene cold-wall chemical vapor deposition(CVD) defects electrical performance 

摘      要：Chemical vapor deposition(CVD)has emerged as a promising approach for the controlled growth of graphene films with appealing scalability,controllability,and ***,the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD *** contrast,owing to the different heating mode,cold-wall CVD(CW-CVD)system exhibits promising potential for the industrial-scale production,but the quality of as-received graphene remains inferior with limited domain size and high defect ***,we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD *** reduced defect density and improved properties,the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion *** study provides a new insight into the quality improvement of graphene derived from CW-CVD system,and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.